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| AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 90m -15A Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575GJ) is available for low-profile applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 +25 -15 -9.5 -45 31.3 -55 to 150 -55 to 150 Units V V A A A W Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.0 62.5 110 Units /W /W /W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200902093 AP9575GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VGS=-4.5V, ID=-9A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min. -60 -1 - Typ. 14 14 3 8 8 17 36 41 115 90 Max. Units 90 120 -3 -10 -250 +100 27 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VGS= +25V, VDS=0V ID=-9A VDS=-48V VGS=-4.5V VDS=-30V ID=-9A RG=3.3,VGS=-10V RD=3.3 VGS=0V VDS=-25V f=1.0MHz Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1100 2660 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-9A, VGS=0V IS=-9A, VGS=0V, dI/dt=-100A/s Min. - Typ. 38 61 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575GH/J 50 40 T C =25 o C 40 -ID , Drain Current (A) -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V TC=150oC 30 -10V -7.0V -5.0V -4.5V 30 20 20 10 10 V G =-3.0V V G =-3.0V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 12 14 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I D = -9 A T C =25 90 1.8 I D = - 12 A V G = -10V 1.6 Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m ) 1.4 80 1.2 1.0 70 0.8 0.6 60 0.4 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10.0 1.4 Normalized -VGS(th) (V) 1.4 8.0 1.2 6.0 -IS(A) 1.0 4.0 T j =150 o C T j =25 o C 0.8 2.0 0.6 0.0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9575GH/J 12 10000 f=1.0MHz I D = -9A V DS = -48V -VGS , Gate to Source Voltage (V) 10 8 1000 C iss 6 C (pF) 4 100 C oss C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thjc) Duty factor=0.5 10 100us 1ms 10ms 0.2 -ID (A) 0.1 0.1 0.05 PDM 1 100ms DC o T C =25 C Single Pulse t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.1 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 |
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